 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon Schottky Diode q Low BAT 62 barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 62 Marking 62 Ordering Code Pin Configuration (tape and reel) Q62702-A971 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS 85 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tj Tstg Values 40 20 100 150 - 55 ... + 150 Unit V mA mW C 810 650 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 02.96 BAT 62 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 40 V Forward voltage IF = 2 mA Diode capacitance VR = 0, f = 1 MHz Case capacitance Differential resistance VR = 0, f = 10 kHz Series inductance Symbol min. IR VF CT CC R0 LS - - - - - - Values typ. - 0.58 0.35 0.1 225 2 max. 10 1 0.6 - - - k nH A Unit V pF Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Semiconductor Group 2 BAT 62 Reverse current IR = f (VR) f = 1 MHz Diode capacitance CT = f (VR) f = 1 MHz Rectifier voltage V0 = f (Vi) f = 900 MHz Semiconductor Group 3 |
Price & Availability of BAT62
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |